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FCPF2250N80Z

MOSFET N-CH 800V 2.6A TO220-3


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FCPF2250N80Z
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 541
  • Description: MOSFET N-CH 800V 2.6A TO220-3 (Kg)

Details

Tags

Parameters
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.25 Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 260μA
Input Capacitance (Ciss) (Max) @ Vds 585pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2.6A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 6.7ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.7 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 2.6A
Gate to Source Voltage (Vgs) 30V
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperFET® II
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 2.25Ohm
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 21.9W Tc
Element Configuration Single
See Relate Datesheet

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