Parameters | |
---|---|
Threshold Voltage | 2.5V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 650V |
Input Capacitance | 2.5nF |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Drain to Source Resistance | 260mOhm |
Rds On Max | 260 mΩ |
Height | 4.9mm |
Length | 10.36mm |
Width | 16.07mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Mount | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Weight | 2.27g |
Packaging | Tube |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Subcategory | FET General Purpose Power |
Max Power Dissipation | 36W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 36W |
Turn On Delay Time | 20 ns |
Rise Time | 11ns |
Drain to Source Voltage (Vdss) | 600V |
Polarity/Channel Type | N-CHANNEL |
Fall Time (Typ) | 13 ns |
Turn-Off Delay Time | 13 ns |
Continuous Drain Current (ID) | 15A |