Parameters | |
---|---|
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Power Dissipation-Max | 29.8W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 29.8W |
Case Connection | ISOLATED |
Turn On Delay Time | 12.7 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 385m Ω @ 4.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1240pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 9A Tc |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Rise Time | 8.7ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 10.2 ns |
Turn-Off Delay Time | 36.9 ns |
Continuous Drain Current (ID) | 9A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 30V |
Drain Current-Max (Abs) (ID) | 9A |
Drain to Source Breakdown Voltage | 600V |
Pulsed Drain Current-Max (IDM) | 27A |
Height | 15.9mm |
Length | 10.16mm |
Width | 4.7mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |
Weight | 2.27g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2013 |
Series | SuperMOS™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |