banner_page

FD1000R17IE4BOSA2

FD1000R17IE4BOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-FD1000R17IE4BOSA2
  • Package: Module
  • Datasheet: PDF
  • Stock: 807
  • Description: FD1000R17IE4BOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 12
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Max Power Dissipation 6.25kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
Qualification Status Not Qualified
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 6250W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 1.39kA
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 720 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 1000A
Turn Off Time-Nom (toff) 1890 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 81nF @ 25V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good