Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Number of Pins | 3 |
Weight | 6.401g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Series | UniFET™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | TIN |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | 260 |
Number of Elements | 1 |
Power Dissipation-Max | 205W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 205W |
Turn On Delay Time | 40 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 380m Ω @ 8.3A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1945pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 16.5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Rise Time | 150ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 80 ns |
Turn-Off Delay Time | 65 ns |
Continuous Drain Current (ID) | 16.5A |
Threshold Voltage | 5V |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 500V |
Pulsed Drain Current-Max (IDM) | 66A |
Avalanche Energy Rating (Eas) | 780 mJ |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |