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FDB016N04AL7

MOSFET 40V N-Channel PowerTrench MOSFET


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDB016N04AL7
  • Package: TO-263-7, D2Pak (6 Leads + Tab)
  • Datasheet: PDF
  • Stock: 516
  • Description: MOSFET 40V N-Channel PowerTrench MOSFET (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7
Weight 1.312g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G6
Number of Elements 1
Power Dissipation-Max 283W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 283W
Case Connection DRAIN
Turn On Delay Time 21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Gate Charge (Qg) (Max) @ Vgs 167nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 118 ns
Continuous Drain Current (ID) 160A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Height 4.7mm
Length 10.2mm
Width 9.4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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