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FDB039N06

MOSFET N-CH 60V 120A D2PAK


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDB039N06
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 477
  • Description: MOSFET N-CH 60V 120A D2PAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Series PowerTrench®
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 231W Tc
Element Configuration Single
Power Dissipation 231W
Turn On Delay Time 30 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.9m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8235pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 133nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 174A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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