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FDB045AN08A0-F085

MOSFET N-CH 75V 19A D2PAK


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDB045AN08A0-F085
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 776
  • Description: MOSFET N-CH 75V 19A D2PAK (Kg)

Details

Tags

Parameters
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 310W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 310W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Factory Lead Time 1 Week
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 25V
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Current - Continuous Drain (Id) @ 25°C 19A Ta
Mount Surface Mount
Gate Charge (Qg) (Max) @ Vgs 138nC @ 10V
Mounting Type Surface Mount
Rise Time 88ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs (Max) ±20V
Fall Time (Typ) 45 ns
Number of Pins 3
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 80A
Weight 1.31247g
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0045Ohm
Transistor Element Material SILICON
Drain to Source Breakdown Voltage 75V
Avalanche Energy Rating (Eas) 600 mJ
Operating Temperature -55°C~175°C TJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Packaging Cut Tape (CT)
Published 2013
Series Automotive, AEC-Q101, PowerTrench®
See Relate Datesheet

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