Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 22 hours ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Weight | 1.31247g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
Series | UniFET™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 49mOhm |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 200V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Current Rating | 52A |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 357W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 357W |
Case Connection | DRAIN |
Turn On Delay Time | 53 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 49m Ω @ 26A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 52A Tc |
Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
Rise Time | 160ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 150 ns |
Turn-Off Delay Time | 48 ns |
Continuous Drain Current (ID) | 52A |
Threshold Voltage | 5V |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 200V |
Pulsed Drain Current-Max (IDM) | 208A |
Avalanche Energy Rating (Eas) | 2520 mJ |
Max Junction Temperature (Tj) | 150°C |
Nominal Vgs | 5 V |
Height | 5.08mm |
Length | 9.98mm |
Width | 10.16mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |