Parameters | |
---|---|
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | MATTE TIN |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | COMMERCIAL |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 68W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 6.5m Ω @ 40A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2.44pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 80A Ta |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 5V |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Drain Current-Max (Abs) (ID) | 80A |
Drain-source On Resistance-Max | 0.0065Ohm |
Pulsed Drain Current-Max (IDM) | 240A |
DS Breakdown Voltage-Min | 30V |
Avalanche Energy Rating (Eas) | 114 mJ |
RoHS Status | ROHS3 Compliant |