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FDB8441-F085

MOSFET N-CH 40V 80A D2PAK


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDB8441-F085
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 595
  • Description: MOSFET N-CH 40V 80A D2PAK (Kg)

Details

Tags

Parameters
Drain Current-Max (Abs) (ID) 28A
Drain-source On Resistance-Max 0.0025Ohm
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 947 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 28A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs 280nC @ 10V
Rise Time 24ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 17.9 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
See Relate Datesheet

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