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FDB8443

MOSFET 40V N-Channel PowerTrench


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDB8443
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 569
  • Description: MOSFET 40V N-Channel PowerTrench (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 188W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 188W
Case Connection DRAIN
Turn On Delay Time 18.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9310pF @ 25V
Current - Continuous Drain (Id) @ 25°C 25A Ta 120A Tc
Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V
Rise Time 17.9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13.5 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 80A
Drain to Source Breakdown Voltage 40V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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