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FDB8443-F085

MOSFET N-CH 40V 25A TO-263AB


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDB8443-F085
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 998
  • Description: MOSFET N-CH 40V 25A TO-263AB (Kg)

Details

Tags

Parameters
Power Dissipation-Max 188W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 188W
Case Connection DRAIN
Turn On Delay Time 18.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9310pF @ 25V
Current - Continuous Drain (Id) @ 25°C 25A Ta
Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V
Rise Time 17.9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13.5 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 25A
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 80A
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Drain to Source Breakdown Voltage 40V
Weight 1.31247g
Radiation Hardening No
Transistor Element Material SILICON
RoHS Status RoHS Compliant
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
See Relate Datesheet

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