Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Number of Pins | 6 |
Weight | 36mg |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2007 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 55mOhm |
Terminal Finish | Tin (Sn) |
Subcategory | Peripheral Drivers |
Power Rating | 700mW |
Voltage - Rated DC | 8V |
Max Power Dissipation | 700mW |
Technology | CMOS |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Number of Functions | 1 |
Supply Voltage | 6.4V |
Terminal Pitch | 0.95mm |
Current Rating | 2.8A |
Base Part Number | FDC6331 |
Number of Outputs | 1 |
Output Type | P-Channel |
Max Output Current | 2.8A |
Voltage | 8V |
Interface | On/Off |
Max Supply Voltage | 8V |
Min Supply Voltage | 2.5V |
Current | 2.8A |
Output Configuration | High Side |
Power Dissipation | 700mW |
Output Current | 2.8A |
Input Type | Non-Inverting |
Switch Type | General Purpose |
Min Input Voltage | 3V |
Max Input Voltage | 20V |
Drain to Source Voltage (Vdss) | 8V |
Nominal Input Voltage | 8V |
Continuous Drain Current (ID) | 2.8A |
Ratio - Input:Output | 1:1 |
Voltage - Load | 2.5V~8V |
Driver Number of Bits | 1 |
Output Peak Current Limit-Nom | 9A |
Rds On (Typ) | 34m Ω |
Max Junction Temperature (Tj) | 150°C |
Drain to Source Resistance | 55mOhm |
Built-in Protections | TRANSIENT |
Height | 900μm |
Length | 3mm |
Width | 1.7mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
The FDC6331L is ideal for small power management in portable electronic equipment with a 2.5V to 8V input voltage range and a 2.8A output current capability. In one tiny SuperSOTTM-6 chip, this load switch integrates a small N-Channel power MOSFET (Q1) that powers a huge P-Channel power MOSFET (Q2).
–2.8 amps, –8 volts @ VGS = –4.5 V, RDS(ON) = 55 m
@ VGS = –2.5 V, RDS(ON) = 70 m
@ VGS = –1.8 V RDS(ON) = 100 m
For ESD toughness (>6KV Human body model), the control MOSFET (Q1) contains Zener protection.
For exceptionally low RDS, high-performance trench technology is used (ON)
Activate the load switch
Management of electrical energy