Parameters | |
---|---|
Radiation Hardening | No |
Terminal Form | GULL WING |
Current Rating | 6.2A |
REACH SVHC | No SVHC |
Number of Elements | 1 |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Power Dissipation-Max | 1.6W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.6W |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Turn On Delay Time | 9 ns |
Contact Plating | Tin |
Mount | Surface Mount |
FET Type | N-Channel |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Number of Pins | 6 |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 24m Ω @ 6.2A, 4.5V |
Weight | 36mg |
Transistor Element Material | SILICON |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Operating Temperature | -55°C~150°C TJ |
Input Capacitance (Ciss) (Max) @ Vds | 1125pF @ 10V |
Packaging | Tape & Reel (TR) |
Current - Continuous Drain (Id) @ 25°C | 6.2A Ta |
Published | 1999 |
Series | PowerTrench® |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
Rise Time | 13ns |
JESD-609 Code | e3 |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Pbfree Code | yes |
Vgs (Max) | ±8V |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Fall Time (Typ) | 13 ns |
Turn-Off Delay Time | 26 ns |
Number of Terminations | 6 |
Continuous Drain Current (ID) | 6.2A |
ECCN Code | EAR99 |
Threshold Voltage | 820mV |
Resistance | 24mOhm |
Gate to Source Voltage (Vgs) | 8V |
Drain to Source Breakdown Voltage | 20V |
Subcategory | FET General Purpose Power |
Nominal Vgs | 820 mV |
Voltage - Rated DC | 20V |
Height | 1mm |
Technology | MOSFET (Metal Oxide) |
Length | 3mm |
Width | 1.7mm |
Terminal Position | DUAL |