Parameters | |
---|---|
Published | 2002 |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | -20V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | -2.2A |
Number of Elements | 1 |
Power Dissipation-Max | 960mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 960mW |
Turn On Delay Time | 8 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 150m Ω @ 2.2A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 369pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 2.2A Ta |
Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 4.5V |
Rise Time | 11ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 11 ns |
Turn-Off Delay Time | 13 ns |
Continuous Drain Current (ID) | 2.2A |
Gate to Source Voltage (Vgs) | 12V |
Drain to Source Breakdown Voltage | -20V |
FET Feature | Schottky Diode (Isolated) |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Number of Pins | 6 |
Weight | 36mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |