FDC642P-F085
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, PowerTrench® |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-G6 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1.2W Ta |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 65m Ω @ 4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 4A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±8V |
| Drain Current-Max (Abs) (ID) | 4A |
| Drain-source On Resistance-Max | 0.065Ohm |
| Pulsed Drain Current-Max (IDM) | 20A |
| DS Breakdown Voltage-Min | 20V |
| Avalanche Energy Rating (Eas) | 72 mJ |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
