Parameters | |
---|---|
Number of Terminations | 6 |
Dual Supply Voltage | 30V |
Termination | SMD/SMT |
Max Junction Temperature (Tj) | 150°C |
Nominal Vgs | 1.7 V |
ECCN Code | EAR99 |
Height | 1.1mm |
Resistance | 35MOhm |
Length | 3mm |
Subcategory | FET General Purpose Power |
Width | 1.7mm |
Voltage - Rated DC | 30V |
Radiation Hardening | No |
Technology | MOSFET (Metal Oxide) |
REACH SVHC | No SVHC |
Terminal Position | DUAL |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Terminal Form | GULL WING |
Current Rating | 5A |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.6W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.6W |
Turn On Delay Time | 7.5 ns |
Factory Lead Time | 1 Week |
FET Type | N-Channel |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Transistor Application | SWITCHING |
Contact Plating | Tin |
Rds On (Max) @ Id, Vgs | 35m Ω @ 5A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Mount | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 15V |
Mounting Type | Surface Mount |
Current - Continuous Drain (Id) @ 25°C | 5A Ta |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Number of Pins | 6 |
Rise Time | 12ns |
Weight | 30mg |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Transistor Element Material | SILICON |
Vgs (Max) | ±20V |
Operating Temperature | -55°C~150°C TJ |
Fall Time (Typ) | 12 ns |
Packaging | Tape & Reel (TR) |
Published | 1997 |
Turn-Off Delay Time | 13 ns |
Continuous Drain Current (ID) | 5A |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Threshold Voltage | 1.7V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 5A |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Drain to Source Breakdown Voltage | 30V |