FDC658P
| Parameters | |
|---|---|
| Height | 1.1mm |
| Length | 3mm |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Width | 1.7mm |
| Radiation Hardening | No |
| Resistance | 50mOhm |
| REACH SVHC | No SVHC |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| RoHS Status | ROHS3 Compliant |
| Subcategory | Other Transistors |
| Lead Free | Lead Free |
| Voltage - Rated DC | -30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -4A |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.6W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.6W |
| Turn On Delay Time | 12 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Factory Lead Time | 1 Week |
| Rds On (Max) @ Id, Vgs | 50m Ω @ 4A, 10V |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 15V |
| Mounting Type | Surface Mount |
| Current - Continuous Drain (Id) @ 25°C | 4A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Rise Time | 14ns |
| Number of Pins | 6 |
| Drain to Source Voltage (Vdss) | 30V |
| Weight | 36mg |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Transistor Element Material | SILICON |
| Vgs (Max) | ±20V |
| Operating Temperature | -55°C~150°C TJ |
| Fall Time (Typ) | 16 ns |
| Packaging | Tape & Reel (TR) |
| Turn-Off Delay Time | 24 ns |
| Published | 2017 |
| Continuous Drain Current (ID) | -4A |
| Threshold Voltage | -1.7V |
| Series | PowerTrench® |
| Gate to Source Voltage (Vgs) | 20V |
| JESD-609 Code | e3 |
| Drain Current-Max (Abs) (ID) | 4A |
| Pbfree Code | yes |
| Part Status | Active |
| Drain to Source Breakdown Voltage | -30V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Junction Temperature (Tj) | 150°C |
See Relate Datesheet
