Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Number of Pins | 6 |
Weight | 36mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | ULTRA-LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Max Power Dissipation | 690mW |
Terminal Form | GULL WING |
Number of Elements | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 690mW |
Turn On Delay Time | 3.5 ns |
FET Type | 2 N-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 350m Ω @ 1.2A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 70pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs | 2nC @ 10V |
Rise Time | 1.7ns |
Drain to Source Voltage (Vdss) | 100V |
Fall Time (Typ) | 2.3 ns |
Turn-Off Delay Time | 5.4 ns |
Continuous Drain Current (ID) | 1.2A |
Threshold Voltage | 3.2V |
JEDEC-95 Code | MO-193AA |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.35Ohm |
Drain to Source Breakdown Voltage | 100V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Max Junction Temperature (Tj) | 150°C |
FET Feature | Standard |
Feedback Cap-Max (Crss) | 5 pF |
Height | 1.1mm |
Length | 3mm |
Width | 1.7mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |