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FDD1600N10ALZD

BOOSTFET N CH 100V 6.8A TO252-5L


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDD1600N10ALZD
  • Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD
  • Datasheet: PDF
  • Stock: 298
  • Description: BOOSTFET N CH 100V 6.8A TO252-5L (Kg)

Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G4
Number of Elements 1
Power Dissipation-Max 14.9W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 50V
Current - Continuous Drain (Id) @ 25°C 6.8A Tc
Gate Charge (Qg) (Max) @ Vgs 3.61nC @ 10V
Rise Time 2ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 6.8A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.16Ohm
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 5.08 mJ
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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