Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Weight | 260.37mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 90MOhm |
Subcategory | Other Transistors |
Voltage - Rated DC | -12V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Current Rating | -6.7A |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 52W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 52W |
Case Connection | DRAIN |
Turn On Delay Time | 16 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 28m Ω @ 6.7A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1290pF @ 6V |
Current - Continuous Drain (Id) @ 25°C | 6.7A Ta |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 4.5V |
Rise Time | 8ns |
Drain to Source Voltage (Vdss) | 12V |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 41 ns |
Turn-Off Delay Time | 34 ns |
Continuous Drain Current (ID) | 6.7A |
Threshold Voltage | -500mV |
Gate to Source Voltage (Vgs) | 8V |
Drain to Source Breakdown Voltage | -12V |
Pulsed Drain Current-Max (IDM) | 54A |
Dual Supply Voltage | -12V |
Nominal Vgs | -500 mV |
Height | 2.39mm |
Length | 6.73mm |
Width | 6.22mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |