Parameters | |
---|---|
Avalanche Energy Rating (Eas) | 90 mJ |
Max Junction Temperature (Tj) | 175°C |
Nominal Vgs | -1.6 V |
Height | 2.39mm |
Length | 6.73mm |
Width | 6.6mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 9 hours ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Weight | 4.535924g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 100MOhm |
Subcategory | Other Transistors |
Voltage - Rated DC | -60V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Current Rating | -15A |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Voltage | 60V |
Power Dissipation-Max | 3.8W Ta 42W Tc |
Element Configuration | Single |
Current | 15A |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 42W |
Case Connection | DRAIN |
Turn On Delay Time | 7 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 100m Ω @ 4.5A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 759pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 15A Ta |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
Rise Time | 10ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 12 ns |
Turn-Off Delay Time | 19 ns |
Continuous Drain Current (ID) | -15A |
Threshold Voltage | -1.6V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -60V |
Dual Supply Voltage | -60V |