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FDD6630A

FDD6630A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDD6630A
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 485
  • Description: FDD6630A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Parameters
Lifecycle Status ACTIVE (Last Updated: 15 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 35MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 21A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 28W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 28W
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 7.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 462pF @ 15V
Current - Continuous Drain (Id) @ 25°C 21A Ta
Gate Charge (Qg) (Max) @ Vgs 7nC @ 5V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 55 mJ
Nominal Vgs 1.7 V
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
See Relate Datesheet

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