Parameters | |
---|---|
FET Type | N-Channel |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Transistor Application | SWITCHING |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Rds On (Max) @ Id, Vgs | 8.6m Ω @ 16.4A, 10V |
Number of Pins | 3 |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Transistor Element Material | SILICON |
Input Capacitance (Ciss) (Max) @ Vds | 1235pF @ 13V |
Operating Temperature | -55°C~175°C TJ |
Current - Continuous Drain (Id) @ 25°C | 16.4A Ta 30A Tc |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
Packaging | Tape & Reel (TR) |
Rise Time | 3ns |
Series | PowerTrench® |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Part Status | Obsolete |
Vgs (Max) | ±20V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Fall Time (Typ) | 3 ns |
Number of Terminations | 2 |
Turn-Off Delay Time | 16 ns |
ECCN Code | EAR99 |
Resistance | 8.6MOhm |
Continuous Drain Current (ID) | 16.4A |
Gate to Source Voltage (Vgs) | 20V |
Subcategory | FET General Purpose Power |
Drain Current-Max (Abs) (ID) | 48A |
Drain to Source Breakdown Voltage | 25V |
Avalanche Energy Rating (Eas) | 24 mJ |
Technology | MOSFET (Metal Oxide) |
Height | 2.39mm |
Terminal Form | GULL WING |
Length | 6.73mm |
JESD-30 Code | R-PSSO-G2 |
Width | 6.22mm |
Number of Elements | 1 |
Radiation Hardening | No |
Power Dissipation-Max | 3.7W Ta 32.6W Tc |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.7W |
Case Connection | DRAIN |
Turn On Delay Time | 7 ns |