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FDD6N50TM-WS

MOSFET N-CH 500V 6A DPAK


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDD6N50TM-WS
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 779
  • Description: MOSFET N-CH 500V 6A DPAK (Kg)

Details

Tags

Parameters
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number FDD6N50
Number of Elements 1
Power Dissipation-Max 89W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 89W
Turn On Delay Time 6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 900m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 16.6nC @ 10V
Rise Time 55ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 6A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 500V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series UniFET™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 900mOhm
See Relate Datesheet

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