Parameters | |
---|---|
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 9.5m Ω @ 14A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1.425pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 14A Ta 56A Tc |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Drain Current-Max (Abs) (ID) | 14A |
Drain-source On Resistance-Max | 0.0095Ohm |
Pulsed Drain Current-Max (IDM) | 100A |
DS Breakdown Voltage-Min | 30V |
Avalanche Energy Rating (Eas) | 174 mJ |
RoHS Status | ROHS3 Compliant |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | MATTE TIN |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | unknown |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | COMMERCIAL |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 2.8W Ta 60W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |