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FDD86113LZ

FDD86113LZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDD86113LZ
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 282
  • Description: FDD86113LZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Weight 260.37mg
Length 6.73mm
Width 6.22mm
Transistor Element Material SILICON
Radiation Hardening No
RoHS Status ROHS3 Compliant
Operating Temperature -55°C~150°C TJ
Lead Free Lead Free
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.1W Ta 29W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 3.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 104m Ω @ 4.2A, 10V
Factory Lead Time 1 Week
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 285pF @ 50V
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Current - Continuous Drain (Id) @ 25°C 4.2A Ta 5.5A Tc
Mount Surface Mount
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Rise Time 1.3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Mounting Type Surface Mount
Vgs (Max) ±20V
Fall Time (Typ) 1.6 ns
Turn-Off Delay Time 9.7 ns
Continuous Drain Current (ID) 4.2A
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5.5A
Number of Pins 3
Drain to Source Breakdown Voltage 100V
Height 2.39mm
See Relate Datesheet

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