Parameters | |
---|---|
Height | 2.517mm |
Length | 6.73mm |
Width | 6.22mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Weight | 260.37mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2017 |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 45MOhm |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 3.1W Ta 132W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.1W |
Case Connection | DRAIN |
Turn On Delay Time | 11.2 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 22m Ω @ 8A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2110pF @ 75V |
Current - Continuous Drain (Id) @ 25°C | 8A Ta 50A Tc |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
Rise Time | 3.7ns |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 4 ns |
Turn-Off Delay Time | 20 ns |
Continuous Drain Current (ID) | 8A |
Threshold Voltage | 2.9V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 8A |
Drain to Source Breakdown Voltage | 150V |
Pulsed Drain Current-Max (IDM) | 40A |
Max Junction Temperature (Tj) | 150°C |