FDD86567-F085
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | MKT-TO252A03REV11 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, PowerTrench® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 227W Tj |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 227W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.2m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4950pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 82nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 100A |
| Drain-source On Resistance-Max | 0.0032Ohm |
| DS Breakdown Voltage-Min | 60V |
| Avalanche Energy Rating (Eas) | 115 mJ |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
