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FDD9407-F085

MOSFET N-CH 40V 100A TO252


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDD9407-F085
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 128
  • Description: MOSFET N-CH 40V 100A TO252 (Kg)

Details

Tags

Parameters
Series Automotive, AEC-Q101, PowerTrench®
Fall Time (Typ) 18 ns
Turn-Off Delay Time 42 ns
JESD-609 Code e3
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 10V
Pbfree Code yes
Drain to Source Breakdown Voltage 40V
Part Status Active
Avalanche Energy Rating (Eas) 171 mJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Radiation Hardening No
Number of Terminations 2
RoHS Status ROHS3 Compliant
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 227W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 27 ns
FET Type N-Channel
Transistor Application SWITCHING
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Rds On (Max) @ Id, Vgs 2m Ω @ 80A, 10V
Mount Surface Mount
Mounting Type Surface Mount
Vgs(th) (Max) @ Id 4V @ 250μA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds 6390pF @ 25V
Number of Pins 2
Current - Continuous Drain (Id) @ 25°C 100A Tc
Weight 260.37mg
Gate Charge (Qg) (Max) @ Vgs 112nC @ 10V
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Rise Time 48ns
Packaging Tape & Reel (TR)
Vgs (Max) ±20V
See Relate Datesheet

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