Parameters | |
---|---|
Series | Automotive, AEC-Q101, PowerTrench® |
Fall Time (Typ) | 18 ns |
Turn-Off Delay Time | 42 ns |
JESD-609 Code | e3 |
Continuous Drain Current (ID) | 100A |
Gate to Source Voltage (Vgs) | 10V |
Pbfree Code | yes |
Drain to Source Breakdown Voltage | 40V |
Part Status | Active |
Avalanche Energy Rating (Eas) | 171 mJ |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Radiation Hardening | No |
Number of Terminations | 2 |
RoHS Status | ROHS3 Compliant |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Number of Elements | 1 |
Power Dissipation-Max | 227W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 27 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Rds On (Max) @ Id, Vgs | 2m Ω @ 80A, 10V |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Input Capacitance (Ciss) (Max) @ Vds | 6390pF @ 25V |
Number of Pins | 2 |
Current - Continuous Drain (Id) @ 25°C | 100A Tc |
Weight | 260.37mg |
Gate Charge (Qg) (Max) @ Vgs | 112nC @ 10V |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Rise Time | 48ns |
Packaging | Tape & Reel (TR) |
Vgs (Max) | ±20V |