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FDFMA2P029Z

FDFMA2P029Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDFMA2P029Z
  • Package: 6-VDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 931
  • Description: FDFMA2P029Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Number of Pins 6
Weight 40mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 95MOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Current Rating -3.1A
Number of Elements 1
Power Dissipation-Max 1.4W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.4W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 95m Ω @ 3.1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.1A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) -3.1A
JEDEC-95 Code MO-229VCCC
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
FET Feature Schottky Diode (Isolated)
Height 750μm
Length 2mm
Width 2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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