Parameters | |
---|---|
Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 4.5V |
Rise Time | 16ns |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 2.8 ns |
Turn-Off Delay Time | 22 ns |
Continuous Drain Current (ID) | 1.6A |
Threshold Voltage | 1V |
Gate to Source Voltage (Vgs) | 12V |
Drain-source On Resistance-Max | 0.299Ohm |
Drain to Source Breakdown Voltage | 30V |
FET Feature | Schottky Diode (Isolated) |
Nominal Vgs | 1 V |
Height | 550μm |
Length | 1.6mm |
Width | 1.6mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-UFDFN Exposed Pad |
Number of Pins | 6 |
Weight | 25.2mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
Series | PowerTrench® |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Number of Elements | 1 |
Power Dissipation-Max | 1.4W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.1W |
Case Connection | DRAIN |
Turn On Delay Time | 6 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 299m Ω @ 1.6A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 75pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 1.8A Ta |