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FDG311N

FDG311N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDG311N
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: PDF
  • Stock: 112
  • Description: FDG311N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 28mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 1.9A
Number of Elements 1
Power Dissipation-Max 750mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 750mW
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 115m Ω @ 1.9A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.9A Ta
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 1.9A
Threshold Voltage 900mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Nominal Vgs 900 mV
Height 1mm
Length 2mm
Width 1.25mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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