Parameters | |
---|---|
ECCN Code | EAR99 |
Resistance | 190MOhm |
Subcategory | Other Transistors |
Gate to Source Voltage (Vgs) | 20V |
Voltage - Rated DC | 30V |
Technology | MOSFET (Metal Oxide) |
Drain to Source Breakdown Voltage | -30V |
Height | 1mm |
Terminal Position | DUAL |
Length | 2mm |
Terminal Form | GULL WING |
Current Rating | 1.6A |
Width | 1.25mm |
Radiation Hardening | No |
Number of Elements | 1 |
REACH SVHC | No SVHC |
Power Dissipation-Max | 750mW Ta |
RoHS Status | ROHS3 Compliant |
Element Configuration | Single |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Operating Mode | ENHANCEMENT MODE |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Contact Plating | Tin |
Power Dissipation | 750mW |
Mount | Surface Mount |
Turn On Delay Time | 8 ns |
Mounting Type | Surface Mount |
FET Type | P-Channel |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Number of Pins | 6 |
Transistor Application | SWITCHING |
Weight | 28mg |
Rds On (Max) @ Id, Vgs | 190m Ω @ 1.6A, 10V |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Published | 2000 |
Input Capacitance (Ciss) (Max) @ Vds | 165pF @ 15V |
Series | PowerTrench® |
Current - Continuous Drain (Id) @ 25°C | 1.6A Ta |
JESD-609 Code | e3 |
Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
Pbfree Code | yes |
Rise Time | 9ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Part Status | Active |
Fall Time (Typ) | 9 ns |
Turn-Off Delay Time | 14 ns |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Continuous Drain Current (ID) | 1.6A |
Number of Terminations | 6 |
Threshold Voltage | -1.6V |