Parameters | |
---|---|
Number of Elements | 1 |
Power Dissipation-Max | 429W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 429W |
Turn On Delay Time | 35 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5.9m Ω @ 120A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 9445pF @ 75V |
Current - Continuous Drain (Id) @ 25°C | 158A Tc |
Gate Charge (Qg) (Max) @ Vgs | 92nC @ 10V |
Rise Time | 67ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 21 ns |
Turn-Off Delay Time | 71 ns |
Continuous Drain Current (ID) | 167A |
JEDEC-95 Code | TO-247AB |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.0059Ohm |
Drain to Source Breakdown Voltage | 150V |
Pulsed Drain Current-Max (IDM) | 668A |
Height | 4.82mm |
Length | 20.82mm |
Width | 15.87mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 6.39g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2013 |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Additional Feature | ULTRA-LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |