Parameters | |
---|---|
Current Rating | 44A |
Lead Free | Lead Free |
Number of Elements | 1 |
Power Dissipation-Max | 750W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 750W |
Case Connection | DRAIN |
Turn On Delay Time | 16 ns |
FET Type | N-Channel |
Factory Lead Time | 1 Week |
Transistor Application | SWITCHING |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Rds On (Max) @ Id, Vgs | 120m Ω @ 22A, 10V |
Mount | Through Hole |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 5335pF @ 25V |
Package / Case | TO-247-3 |
Current - Continuous Drain (Id) @ 25°C | 44A Tc |
Number of Pins | 3 |
Gate Charge (Qg) (Max) @ Vgs | 108nC @ 10V |
Weight | 6.39g |
Transistor Element Material | SILICON |
Rise Time | 84ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Vgs (Max) | ±30V |
Published | 2013 |
Fall Time (Typ) | 79 ns |
JESD-609 Code | e3 |
Turn-Off Delay Time | 45 ns |
Pbfree Code | yes |
Continuous Drain Current (ID) | 44A |
Part Status | Active |
Threshold Voltage | 3.15V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Gate to Source Voltage (Vgs) | 30V |
Number of Terminations | 3 |
Drain to Source Breakdown Voltage | 500V |
Termination | Through Hole |
Dual Supply Voltage | 500V |
Nominal Vgs | 3.15 V |
ECCN Code | EAR99 |
Resistance | 120mOhm |
Height | 20.82mm |
Terminal Finish | Tin (Sn) |
Length | 15.87mm |
Width | 4.82mm |
Subcategory | FET General Purpose Power |
Radiation Hardening | No |
Voltage - Rated DC | 500V |
REACH SVHC | No SVHC |
Technology | MOSFET (Metal Oxide) |
RoHS Status | ROHS3 Compliant |