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FDH45N50F-F133

MOSFET N-CH 500V 45A TO-247


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDH45N50F-F133
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 396
  • Description: MOSFET N-CH 500V 45A TO-247 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series UniFET™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 625W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 22.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6630pF @ 25V
Current - Continuous Drain (Id) @ 25°C 45A Tc
Gate Charge (Qg) (Max) @ Vgs 137nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
JEDEC-95 Code TO-247AD
Drain Current-Max (Abs) (ID) 45A
Drain-source On Resistance-Max 0.12Ohm
Pulsed Drain Current-Max (IDM) 180A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 1868 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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