Parameters | |
---|---|
Case Connection | DRAIN |
Turn On Delay Time | 17 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3.8m Ω @ 80A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 6400pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 17A Ta 80A Tc |
Gate Charge (Qg) (Max) @ Vgs | 124nC @ 10V |
Rise Time | 144ns |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 60 ns |
Turn-Off Delay Time | 34 ns |
Continuous Drain Current (ID) | 80A |
JEDEC-95 Code | TO-262AB |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.0038Ohm |
Drain to Source Breakdown Voltage | 60V |
Avalanche Energy Rating (Eas) | 625 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Weight | 2.084g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2013 |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 60V |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Current Rating | 80A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSIP-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 310W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 310W |