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FDI045N10A-F102

MOSFET N-CH 100V 120A I2PAK-3


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDI045N10A-F102
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: -
  • Stock: 272
  • Description: MOSFET N-CH 100V 120A I2PAK-3 (Kg)

Details

Tags

Parameters
Height 9.65mm
Length 10.29mm
Width 4.83mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Weight 2.084g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series PowerTrench®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 263W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 263W
Turn On Delay Time 23 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5270pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Rise Time 26ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
See Relate Datesheet

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