Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Number of Pins | 3 |
Weight | 2.084g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Series | Automotive, AEC-Q101, PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Power Dissipation-Max | 176W Tj |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 176W |
Case Connection | DRAIN |
Turn On Delay Time | 28 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.2m Ω @ 80A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 7710pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 110A Tc |
Gate Charge (Qg) (Max) @ Vgs | 138nC @ 10V |
Rise Time | 48ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 20 ns |
Turn-Off Delay Time | 50 ns |
Continuous Drain Current (ID) | 110A |
JEDEC-95 Code | TO-262AB |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.0022Ohm |
Drain to Source Breakdown Voltage | 40V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |