Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-264-3, TO-264AA |
Number of Pins | 3 |
Weight | 6.756g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2013 |
Series | UniFET™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2500W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5kW |
Turn On Delay Time | 63 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 55m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 12000pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 238nC @ 10V |
Rise Time | 186ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 105 ns |
Turn-Off Delay Time | 202 ns |
Continuous Drain Current (ID) | 100A |
Threshold Voltage | 3V |
Gate to Source Voltage (Vgs) | 30V |
Drain-source On Resistance-Max | 0.055Ohm |
Drain to Source Breakdown Voltage | 500V |
Pulsed Drain Current-Max (IDM) | 400A |
Avalanche Energy Rating (Eas) | 5000 mJ |
Max Junction Temperature (Tj) | 150°C |
Height | 29mm |
Length | 20mm |
Width | 5mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |