Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Contact Plating | Gold |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-VDFN Exposed Pad |
Number of Pins | 6 |
Weight | 40mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | PowerTrench® |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 68mOhm |
Additional Feature | ESD PROTECTION |
Subcategory | Other Transistors |
Voltage - Rated DC | 20V |
Max Power Dissipation | 1.4W |
Current Rating | 3.7A |
Number of Elements | 2 |
Number of Channels | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.4W |
Case Connection | DRAIN |
Power - Max | 700mW |
FET Type | N and P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 68m Ω @ 3.7A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 3.7A 3.1A |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
Rise Time | 11ns |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Fall Time (Typ) | 11 ns |
Turn-Off Delay Time | 37 ns |
Continuous Drain Current (ID) | 3.7A |
Threshold Voltage | 1V |
Gate to Source Voltage (Vgs) | 12V |
Drain to Source Breakdown Voltage | 20V |
Dual Supply Voltage | 20V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Max Junction Temperature (Tj) | 150°C |
FET Feature | Logic Level Gate |
Nominal Vgs | 1 V |
Height | 850μm |
Length | 2mm |
Width | 2mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |