Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Contact Plating | Gold |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-WDFN Exposed Pad |
Number of Pins | 6 |
Weight | 30mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
Series | PowerTrench® |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Resistance | 30MOhm |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Number of Elements | 1 |
Power Dissipation-Max | 2.4W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 900mW |
Case Connection | DRAIN |
Turn On Delay Time | 9.8 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 30m Ω @ 5.7A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 935pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 5.7A Ta |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V |
Rise Time | 8.6ns |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 8.6 ns |
Turn-Off Delay Time | 21.5 ns |
Continuous Drain Current (ID) | 5.7A |
Threshold Voltage | 830mV |
Gate to Source Voltage (Vgs) | 12V |
Drain Current-Max (Abs) (ID) | 24A |
Drain to Source Breakdown Voltage | 20V |
Pulsed Drain Current-Max (IDM) | 24A |
Height | 750μm |
Length | 2mm |
Width | 2mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |