Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Contact Plating | Gold |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-VDFN Exposed Pad |
Number of Pins | 6 |
Weight | 30mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | PowerTrench® |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 40MOhm |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2.4W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 900mW |
Case Connection | DRAIN |
Turn On Delay Time | 8.3 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 40m Ω @ 5A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
Rise Time | 7.1ns |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 7.1 ns |
Turn-Off Delay Time | 18.1 ns |
Continuous Drain Current (ID) | 5A |
Threshold Voltage | 810mV |
Gate to Source Voltage (Vgs) | 12V |
Drain Current-Max (Abs) (ID) | 5A |
Drain to Source Breakdown Voltage | 30V |
Pulsed Drain Current-Max (IDM) | 20A |
Dual Supply Voltage | 30V |
Max Junction Temperature (Tj) | 150°C |
Nominal Vgs | 810 mV |
Height | 825μm |
Length | 2mm |
Width | 2mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |