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FDMA430NZ

FDMA430NZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDMA430NZ
  • Package: 6-VDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 463
  • Description: FDMA430NZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Number of Pins 6
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 40MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.4W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 900mW
Case Connection DRAIN
Turn On Delay Time 8.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Rise Time 7.1ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 7.1 ns
Turn-Off Delay Time 18.1 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 810mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 20A
Dual Supply Voltage 30V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 810 mV
Height 825μm
Length 2mm
Width 2mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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