Parameters | |
---|---|
JESD-609 Code | e4 |
Pbfree Code | yes |
Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
Part Status | Active |
Vgs (Max) | ±8V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Fall Time (Typ) | 64 ns |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Turn-Off Delay Time | 125 ns |
Resistance | 30MOhm |
Continuous Drain Current (ID) | -7.8A |
Subcategory | Other Transistors |
Threshold Voltage | -700mV |
Technology | MOSFET (Metal Oxide) |
Gate to Source Voltage (Vgs) | 8V |
Terminal Position | DUAL |
Drain to Source Breakdown Voltage | -20V |
Number of Elements | 1 |
Power Dissipation-Max | 2.4W Ta |
Pulsed Drain Current-Max (IDM) | 24A |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Nominal Vgs | -700 mV |
Power Dissipation | 2.4W |
Height | 750μm |
Case Connection | DRAIN |
Length | 2mm |
Turn On Delay Time | 7 ns |
Width | 2mm |
Factory Lead Time | 1 Week |
Radiation Hardening | No |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
FET Type | P-Channel |
REACH SVHC | No SVHC |
Contact Plating | Gold |
Transistor Application | SWITCHING |
Mount | Surface Mount |
RoHS Status | ROHS3 Compliant |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 30m Ω @ 7.8A, 4.5V |
Lead Free | Lead Free |
Package / Case | 6-VDFN Exposed Pad |
Number of Pins | 6 |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Weight | 30mg |
Input Capacitance (Ciss) (Max) @ Vds | 1480pF @ 10V |
Transistor Element Material | SILICON |
Current - Continuous Drain (Id) @ 25°C | 7.8A Ta |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 4.5V |
Published | 2009 |
Rise Time | 9ns |
Series | PowerTrench® |
Drain to Source Voltage (Vdss) | 20V |