Parameters | |
---|---|
Published | 2006 |
Series | PowerTrench® |
JESD-609 Code | e4 |
Drain to Source Voltage (Vdss) | 30V |
Pbfree Code | yes |
Part Status | Active |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
Vgs (Max) | ±25V |
Termination | SMD/SMT |
Fall Time (Typ) | 31 ns |
Turn-Off Delay Time | 43 ns |
ECCN Code | EAR99 |
Resistance | 35MOhm |
Continuous Drain Current (ID) | -6.8A |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Threshold Voltage | -2.1V |
Subcategory | Other Transistors |
Gate to Source Voltage (Vgs) | 25V |
Voltage - Rated DC | -30V |
Drain to Source Breakdown Voltage | -30V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Pulsed Drain Current-Max (IDM) | 24A |
Dual Supply Voltage | -30V |
Terminal Form | NO LEAD |
Nominal Vgs | 25 V |
Peak Reflow Temperature (Cel) | 260 |
Height | 750μm |
Current Rating | -6.8A |
Length | 2mm |
Time@Peak Reflow Temperature-Max (s) | 30 |
Width | 2mm |
REACH SVHC | No SVHC |
Qualification Status | Not Qualified |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Number of Elements | 1 |
Power Dissipation-Max | 2.4W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.4W |
Turn On Delay Time | 6 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 35m Ω @ 6.8A, 10V |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Mount | Surface Mount |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Mounting Type | Surface Mount |
Package / Case | 6-VDFN Exposed Pad |
Input Capacitance (Ciss) (Max) @ Vds | 1070pF @ 15V |
Number of Pins | 6 |
Weight | 30mg |
Current - Continuous Drain (Id) @ 25°C | 6.8A Ta |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
Packaging | Tape & Reel (TR) |
Rise Time | 21ns |