Parameters | |
---|---|
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-VDFN Exposed Pad |
Number of Pins | 6 |
Weight | 30mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
Series | PowerTrench® |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Number of Elements | 1 |
Power Dissipation-Max | 2.4W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 900mW |
Case Connection | DRAIN |
Turn On Delay Time | 11 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 16m Ω @ 10A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3405pF @ 6V |
Current - Continuous Drain (Id) @ 25°C | 10A Ta |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 6V |
Rise Time | 11ns |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 59 ns |
Turn-Off Delay Time | 120 ns |
Continuous Drain Current (ID) | 10A |
Threshold Voltage | -700mV |
Gate to Source Voltage (Vgs) | 8V |
Drain Current-Max (Abs) (ID) | 1A |
Drain to Source Breakdown Voltage | 12V |
Height | 725μm |
Length | 2mm |
Width | 2mm |
Radiation Hardening | No |