FDMC15N06
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 200mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| JESD-30 Code | S-PDSO-N5 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.3W Ta 35W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 35W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 900m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A Ta 15A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 11.5nC @ 10V |
| Rise Time | 36.5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 22 ns |
| Turn-Off Delay Time | 22.5 ns |
| Continuous Drain Current (ID) | 15A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 2.4A |
| Drain-source On Resistance-Max | 0.09Ohm |
| Drain to Source Breakdown Voltage | 55V |
| Pulsed Drain Current-Max (IDM) | 60A |
| Avalanche Energy Rating (Eas) | 36 mJ |
| Height | 500μm |
| Length | 3.3mm |
| Width | 3.3mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
