Parameters | |
---|---|
Package / Case | 8-PowerWDFN |
Number of Pins | 8 |
Weight | 210mg |
REACH SVHC | No SVHC |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
RoHS Status | ROHS3 Compliant |
Series | QFET® |
JESD-609 Code | e4 |
Pbfree Code | yes |
Lead Free | Lead Free |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Resistance | 1.5Ohm |
Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
Subcategory | Other Transistors |
Voltage - Rated DC | -150V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Current Rating | -3A |
JESD-30 Code | S-PDSO-F5 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 42W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 42W |
Case Connection | DRAIN |
Turn On Delay Time | 15 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.5 Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 3A Tc |
Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
Rise Time | 11ns |
Drain to Source Voltage (Vdss) | 150V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 13 ns |
Turn-Off Delay Time | 19 ns |
Continuous Drain Current (ID) | 3A |
Threshold Voltage | 3.8V |
Gate to Source Voltage (Vgs) | 30V |
Drain Current-Max (Abs) (ID) | 3A |
Drain to Source Breakdown Voltage | -150V |
Max Junction Temperature (Tj) | 150°C |
Height | 800μm |
Length | 3mm |
Width | 3mm |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Radiation Hardening | No |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |